Semiconductor memory device and method for manufacturing same

ABSTRACT

A semiconductor memory device includes a semiconductor substrate including a diode formed in an upper layer portion of the semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film and coupled to the diode, a stacked body provided above the first conductive film, an insulator and an electrode film being stacked alternately in the stacked body, a semiconductor member piercing the stacked body and being connected to the first conductive film, and a charge storage member provided between the electrode film and the semiconductor member.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of and claims the benefit of priorityunder 35 U.S.C. § 120 from U.S. application Ser. No. 16/129,082 filedSep. 12, 2018, and claims the benefit of priority under 35 U.S.C. § 119from Japanese Patent Application No. 2017-247987 filed Dec. 25, 2017;the entire contents of each of which are incorporated herein byreference.

FIELD

Embodiments described herein relate generally to a semiconductor memorydevice and a method for manufacturing same.

BACKGROUND

In recent years, a stacked semiconductor memory device has been proposedin which memory cells are integrated three-dimensionally. For such astacked semiconductor memory device, investigations are being performedto realize even more downsizing by providing a thick insulating filmbetween the semiconductor substrate and the memory cells and by forminga control circuit inside the insulating film and the upper layer portionof the semiconductor substrate. In such a case, a conductive film isprovided on the insulating film and used as a source line.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing a semiconductor memory deviceaccording to a first embodiment;

FIG. 2 is a cross-sectional view showing the semiconductor memory deviceaccording to the first embodiment;

FIG. 3 is a top view showing the semiconductor memory device accordingto the first embodiment;

FIG. 4 is a cross-sectional view showing a memory cell transistor of thesemiconductor memory device according to the first embodiment;

FIG. 5 is a cross-sectional view showing a memory cell transistor of thesemiconductor memory device according to the first embodiment;

FIG. 6 is a cross-sectional view showing a method for manufacturing thesemiconductor memory device according to the first embodiment;

FIG. 7 is a cross-sectional view showing a method for manufacturing thesemiconductor memory device according to the first embodiment;

FIG. 8 is a cross-sectional view showing a method for manufacturing thesemiconductor memory device according to the first embodiment;

FIG. 9 is a cross-sectional view showing a method for manufacturing thesemiconductor memory device according to the first embodiment;

FIG. 10 is a cross-sectional view showing a method for manufacturing thesemiconductor memory device according to the first embodiment;

FIG. 11 is a cross-sectional view showing a semiconductor memory deviceaccording to a second embodiment;

FIG. 12 is a cross-sectional view showing a semiconductor memory deviceaccording to a third embodiment;

FIG. 13 is a top view showing the semiconductor memory device accordingto the third embodiment;

FIG. 14 is a cross-sectional view showing a method for manufacturing thesemiconductor memory device according to the third embodiment; and

FIG. 15 is a cross-sectional view showing a method for manufacturing thesemiconductor memory device according to the third embodiment.

DETAILED DESCRIPTION

According to one embodiment, a semiconductor memory device includes asemiconductor substrate including a diode formed in an upper layerportion of the semiconductor substrate, a first insulating film providedabove the semiconductor substrate, a first conductive film providedabove the first insulating film and coupled to the diode, a stacked bodyprovided above the first conductive film, an insulator and an electrodefilm being stacked alternately in the stacked body, a semiconductormember piercing the stacked body and being connected to the firstconductive film, and a charge storage member provided between theelectrode film and the semiconductor member.

First Embodiment

A first embodiment will now be described.

FIG. 1 and FIG. 2 are cross-sectional views showing a semiconductormemory device according to the embodiment.

FIG. 3 is a top view showing the semiconductor memory device accordingto the embodiment.

FIG. 4 and FIG. 5 are cross-sectional views showing the memory celltransistor of the semiconductor memory device according to theembodiment.

The drawings are schematic and are drawn with appropriate exaggerationsor omissions. For example, the components are drawn to be larger andfewer than the actual components. Also, the numbers, dimensional ratios,etc., of the components do not always match between the drawings.

The semiconductor memory device according to the embodiment is stackedNAND flash memory.

As shown in FIG. 1, a silicon substrate 10 is provided in thesemiconductor memory device 1 according to the embodiment. For example,the silicon substrate 10 is formed of single-crystal silicon (Si).

As shown in FIG. 2, for example, the conductivity type of the main bodyportion of the silicon substrate 10 is a p-type. An n-type well 11 isformed in a portion of the upper layer portion of the silicon substrate10. A p-type well 12 is formed in a portion of the upper layer portionof the n-type well 11. An n⁺-type diffusion layer 13 is formed in aportion of the upper layer portion of the p-type well 12. The donorconcentration of the n⁺-type diffusion layer 13 is higher than the donorconcentration of the n-type well 11.

A diode 21 is formed at the interface between the silicon substrate 10and the n-type well 11; a diode 22 is formed at the interface betweenthe p-type well 12 and the n-type well 11; and a diode 23 is formed atthe interface between the p-type well 12 and the n⁺-type diffusion layer13. A bidirectional diode 20 is formed by connecting the diode 21, thediode 22, and the diode 23 in series. One or multiple bidirectionaldiodes 20 are formed in a portion of the upper layer portion of thesilicon substrate 10.

A diffusion layer 15 and STI (Shallow Trench Isolation (anelement-separating insulating film)) 16 are formed in the upper layerportion of the silicon substrate 10. Also, for example, the source/drainlayers of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors)(not illustrated), etc., are formed in the upper layer portion of thesilicon substrate 10.

As shown in FIG. 1 and FIG. 2, a gate insulating layer 31 is formed onthe silicon substrate 10; and an insulating film 32 is formed on thegate insulating layer 31. For example, the gate insulating layer 31 andthe insulating film 32 are formed of silicon oxide (SiO). For example,the gate insulating layer 31 is formed by thermal oxidation of thesilicon substrate 10; and, for example, the insulating film 32 is formedby CVD (Chemical Vapor Deposition) using TEOS (Tetraethyl orthosilicate(Si(OC₂H₅)₄)) as a source material.

In the specification hereinbelow, an XYZ orthogonal coordinate system isemployed for convenience of description. Two mutually-orthogonaldirections parallel to an upper surface 10 a of the silicon substrate 10are taken as an “X-direction” and a “Y-direction;” and a directionperpendicular to the upper surface 10 a of the silicon substrate 10 istaken as a “Z-direction.” Although a direction that is in theZ-direction from the silicon substrate 10 toward the insulating film 32also is called “up” and the reverse direction also is called “down,”these expressions are for convenience and are independent of thedirection of gravity.

A gate electrode 33 is provided inside the insulating film 32 on thegate insulating layer 31. A MOSFET 35 is formed of source/drain layers(not illustrated), the gate insulating layer 31, and the gate electrode33. Interconnects 36 and plugs 37 are formed inside the insulating film32. A portion of the plugs 37 connects the interconnects 36 to eachother; and another portion of the plugs 37 connects the interconnect 36to the diffusion layer 15 of the silicon substrate 10. A control circuit39 includes the MOSFET 35, a portion of the interconnects 36, and aportion of the plugs 37. Other components may be included in the controlcircuit 39. A plug 40 is provided on the interconnect 36 of theuppermost level inside the insulating film 32.

A source electrode film 41 is provided on the insulating film 32. Theconfiguration of the source electrode film 41 is a substantially flatplate configuration spreading along the XY plane and is patterned into aprescribed configuration as described below. In the source electrodefilm 41, for example, a metal layer 42 that is made of tungsten (W) isprovided; and, for example, a silicon layer 43 that is made ofpolycrystalline silicon (Si) is provided on the metal layer 42. Aninsulating film 44 is provided at the periphery of the source electrodefilm 41. An insulating film 45 that pierces the source electrode film 41in the Z-direction is provided in a region surrounded with the sourceelectrode film 41.

A portion of the lower surface of the source electrode film 41 contactsthe plug 40. Thereby, the portion of the source electrode film 41 isconnected to the upper end of the plug 40. The lower end of the plug 40is connected to a portion of the interconnect 36 of the uppermost level.The interconnect 36 is connected to the interconnects 36 of lower levelsby the plugs 37; and a portion of the interconnect 36 of the lowermostlevel is connected to the upper surface of the n⁺-type diffusion layer13 via the plug 37. Thereby, a portion of the source electrode film 41is connected to one end of the bidirectional diode 20 via the plug 40,the multiple interconnects 36, and the multiple plugs 37. The currentpath from the source electrode film 41 to the bidirectional diode 20 isinsulated from the control circuit 39.

A stacked body 50 is provided on the source electrode film 41. In thestacked body 50, insulating films 51 and electrode films 52 are stackedalternately along the Z-direction. The insulating films 51 are made of,for example, silicon oxide; and the electrode films 52 are made of, forexample, tungsten. The configuration of the end portion of the stackedbody 50 is a staircase configuration in which terraces are formed everyelectrode film 52. Air gaps may be formed as the insulators instead ofthe insulating films 51.

A columnar portion 60 is provided inside the stacked body 50. Theconfiguration of the columnar portion 60 is a circular column having acentral axis extending in the Z-direction. A silicon member 61 isprovided at the lower portion of the columnar portion 60; and a siliconpillar 62 is provided on the silicon member 61. A memory film 63 isprovided at the periphery of the silicon pillar 62. The silicon pillar62 is connected to the silicon member 61; and the silicon member 61 isconnected to the source electrode film 41.

As shown in FIG. 4 and FIG. 5, a core member 64 that is made of siliconoxide is provided inside the silicon pillar 62. A tunneling insulatingfilm 65, a charge storage film 66, and a silicon oxide layer 67 areprovided in this order from the inner side, i.e., the silicon pillar 62side, toward the outer side in the memory film 63. On the other hand, analuminum oxide layer 68 is provided on the upper surface of theelectrode film 52, on the lower surface of the electrode film 52, and onthe side surface of the electrode film 52 opposing the silicon pillar62. A blocking insulating film 69 includes the silicon oxide layer 67and the aluminum oxide layer 68.

Although the tunneling insulating film 65 normally is insulative, thetunneling insulating film 65 is a film in which a tunneling currentflows when a prescribed voltage within the range of the drive voltage ofthe semiconductor memory device 1 is applied and is, for example, asingle-layer silicon oxide film or an ONO film in which a silicon oxidelayer, a silicon nitride layer, and a silicon oxide layer are stacked inthis order. The charge storage film 66 is a film that can store charge,is made from, for example, a material having trap sites of electrons,and is made of, for example, silicon nitride. The blocking insulatingfilm 69 is a film in which a current substantially does not flow evenwhen a voltage within the range of the drive voltage of thesemiconductor memory device 1 is applied.

The memory film 63 is formed of the tunneling insulating film 65, thecharge storage film 66, and the blocking insulating film 69. The memoryfilm 63 is disposed between the silicon pillar 62 and the electrode film52. The columnar portion 60 includes the silicon member 61, the siliconpillar 62, the memory film 63, and the core member 64. The siliconpillar 62 is insulated from the electrode films 52 by the memory film63. The silicon member 61 also is insulated from the electrode films 52by an insulating film (not illustrated).

As shown in FIG. 1 to FIG. 3, an insulating film 70 that is made of, forexample, silicon oxide is provided at the periphery of the stacked body50 on the source electrode film 41 and on the insulating film 44. Aninsulating plate 71 is provided inside the insulating film 70 tosubstantially surround the stacked body 50. The insulating plate 71 isseparated from the stacked body 50. The insulating plate 71 pierces thesource electrode film 41 and reaches the insulating film 32. Also,multiple insulating plates 72 that extend in the X-direction areprovided inside the stacked body 50. The insulating plates 72 pierce theinsulating films 51 and the electrode films 52 of the stacked body 50and reach the source electrode film 41. For example, a block that isused as the minimum unit of the data erase is formed of each of thestacked bodies 50 divided in the Y-direction by the insulating plates72. For example, the insulating plates 71 and 72 are formed of siliconoxide. The insulating plate 71 and the insulating plates 72 may belinked to each other. Also, the configuration of the insulating plate 71may be a frame-like configuration surrounding the stacked body 50 whenviewed from the Z-direction. However, even in such a case, theinsulating plate 71 is separated from the stacked body 50.

The source electrode film 41 is divided by the insulating plate 71 intoa central portion 41 a disposed on the inner side of the insulatingplate 71 and a peripheral portion 41 b disposed on the outer side of theinsulating plate 71. The central portion 41 a and the peripheral portion41 b are insulated from each other by the insulating plate 71. In otherwords, the lower portion of the insulating plate 71 is disposed betweenthe central portion 41 a and the peripheral portion 41 b. The centralportion 41 a is connected to the silicon pillars 62 via the siliconmembers 61. The peripheral portion 41 b is connected to thebidirectional diode 20 via the plug 40, the interconnects 36, and theplugs 37.

Bit lines 75 that extend in the Y-direction are provided on the stackedbody 50 and on the insulating film 70. The bit lines 75 are connected tothe upper ends of the silicon pillars 62. An insulating film 76 isprovided on the stacked body 50 and on the insulating film 70 to coverthe bit lines 75. A plug 77 is provided inside the insulating film 76. Athrough-via 78 that extends in the Z-direction to pierce the stackedbody 50 and the insulating film 45 surrounded with the source electrodefilm 41 is provided between the plug 77 and the interconnect 36 of thecontrol circuit 39. An insulating film 79 that is made of, for example,silicon oxide is provided at the periphery of the through-via 78. Thethrough-via 78 is insulated from the electrode films 52 and the sourceelectrode film 41 by the insulating film 79. An upper layer interconnect80 is provided on the plug 77 and is connected to the plug 77.

As shown in FIG. 2 and FIG. 3, contacts 81 to 83 are provided inside theinsulating film 70. The lower ends of the contacts 81 are connected tothe electrode films 52; and the upper ends of the contacts 81 areconnected to a portion of the upper layer interconnects (notillustrated). The lower ends of the contacts 82 are connected to thesource electrode film 41; and the upper ends of the contacts 82 areconnected to another portion of the upper layer interconnects (notillustrated). The lower ends of the contacts 83 are connected to thediffusion layers 15 of the silicon substrate 10, etc.; and the upperends of the contacts 83 are connected to yet another portion of theupper layer interconnects (not illustrated).

In the semiconductor memory device 1 according to the embodiment, amemory cell 59 is formed at each crossing portion between the electrodefilms 52 and the silicon pillars 62. The channel of the memory cell 59is the silicon pillar 62; the gate insulating film is the tunnelinginsulating film 65 and the blocking insulating film 69; the gate is theelectrode film 52; and the charge storage member is the charge storagefilm 66. The control circuit 39 injects charge from the silicon pillar62 into the charge storage film 66 and discharges the charge from thecharge storage film 66 into the silicon pillar 62 by controlling thepotentials of the source electrode film 41, the bit lines 75, and theelectrode films 52. Thereby, the threshold voltages of the memory cells59 are changed; and data is stored.

A method for manufacturing the semiconductor memory device according tothe embodiment will now be described.

FIG. 6 to FIG. 10 are cross-sectional views showing the method formanufacturing the semiconductor memory device according to theembodiment.

First, as shown in FIG. 6 and FIG. 2, the n-type well 11, the p-typewell 12, the n⁺-type diffusion layer 13, the diffusion layer 15, the STI16, etc., are formed in the upper layer portion of the silicon substrate10. Thereby, the bidirectional diode 20 is formed in a portion of theupper layer portion of the silicon substrate 10.

Continuing, the gate insulating layer 31 is formed in the upper surface10 a of the silicon substrate 10 by performing thermal oxidationtreatment. Then, for example, the gate electrode 33, the plugs 37, theinterconnects 36, and the plug 40 are formed while forming theinsulating film 32 by repeating CVD using TEOS as a source material.Thereby, the control circuit 39 is formed inside the insulating film 32and the upper layer portion of the silicon substrate 10. At this time,the plug 40 is connected to the n⁺-type diffusion layer 13 via a portionof the plugs 37 and a portion of the interconnects 36.

Continuing, the source electrode film 41 is formed by forming the metallayer 42 on the insulating film 32 and by depositing the silicon layer43 on the metal layer 42. Then, the source electrode film 41 ispatterned; the insulating film 44 is formed at the periphery of thesource electrode film 41; and the insulating film 45 is formed in aregion surrounded with the source electrode film 41.

Continuing, the stacked body 50 is formed on the source electrode film41, the insulating film 44, and the insulating film 45 by alternatelydepositing the insulating films 51 made of silicon oxide and insulativesacrificial films 91 made of silicon nitride (SiN). The material of thesacrificial films 91 is not limited to silicon nitride as long as thematerial is insulative and has etching selectivity with respect to theinsulating films 51. Then, the end portion of the stacked body 50 ispatterned into a staircase configuration in which a terrace is formedevery sacrificial film 91. Then, the insulating film 70 is formed at theperiphery of the stacked body 50 by depositing silicon oxide.

Continuing as shown in FIG. 7, a mask pattern 92 is formed on thestacked body 50 and on the insulating film 70. Then, reactive ionetching (RIE) is performed using the mask pattern 92 as a mask.Specifically, positive ions of the etching species are generated byplasmatizing an etching gas; and the positive ions are accelerated byapplying an electric field and caused to collide selectively with thestacked body 50 via the mask pattern 92. Thereby, memory holes 93 areformed in the stacked body 50. At this time, the stacked body 50 isformed from insulating materials, i.e., silicon oxide and siliconnitride; therefore, a positive charge that originates in the positiveions of the etching species accumulates inside the memory holes 93. Onthe other hand, at this stage, a negative charge accumulates on theouter surface of the intermediate structure body. In FIG. 7, thepositive charge is illustrated by the symbols of “+” surrounded with acircle; and the negative charge is illustrated by the symbols of “−”surrounded with a circle.

Continuing as shown in FIG. 8, when the memory holes 93 reach the sourceelectrode film 41, the positive charge that has accumulated inside thememory holes 93 moves into the source electrode film 41 and furtherflows into the n⁺-type diffusion layer 13 via the plug 40, theinterconnects 36, and the plugs 37 as shown by a path E in FIG. 8.Thereby, the diode 23 and the diode 21 of the bidirectional diode 20breakdown; and the positive charge flows into the silicon substrate 10via the bidirectional diode 20 and is discharged to the outside via thesilicon substrate 10. As a result, arcing inside the insulating film 32can be prevented.

Continuing as shown in FIG. 9, FIG. 4, and FIG. 5, the silicon members61 are formed by epitaxial growth of the silicon inside the lowerportions of the memory holes 93 by using the silicon layer 43 as astarting point. Then, the silicon oxide layer 67, the charge storagefilm 66, the tunneling insulating film 65, the silicon pillar 62, andthe core member 64 are formed on the inner surfaces of the memory holes93 on the silicon members 61. The silicon pillars 62 are connected tothe source electrode film 41 via the silicon members 61. Then, athrough-via hole 94 is formed to pierce the stacked body 50, theinsulating film 45, and the upper portions of the insulating film 32 andreach a portion of the interconnect 36. Then, the insulating film 79 isformed on the inner surface of the through-via hole 94; and thethrough-via 78 is formed on the inner surface of the insulating film 79.The through-via 78 is connected to the interconnect 36.

Continuing as shown in FIG. 10 and FIG. 3, slits 95 are formed to piercethe insulating film 70 and the source electrode film 41; and slits 96are formed to pierce the stacked body 50. The source electrode film 41is divided into the central portion 41 a and the peripheral portion 41 bby the slits 95. This dividing causes the central portion 41 a to beinsulated from the silicon substrate 10 because the plug 40 is connectedto only the peripheral portion 41 b. Then, the sacrificial films 91(referring to FIG. 9) are removed by performing wet etching via theslits 96. As a result, spaces 97 are formed where the sacrificial films91 are removed.

Continuing as shown in FIG. 1, FIG. 4, and FIG. 5, the aluminum oxidelayer 68 is formed on the inner surfaces of the spaces 97 via the slits96. The aluminum oxide layer 68 contacts the silicon oxide layer 67; andthe blocking insulating film 69 is formed of the aluminum oxide layer 68and the silicon oxide layer 67. The memory film 63 is formed of thetunneling insulating film 65, the charge storage film 66, and theblocking insulating film 69. Then, a barrier metal layer (notillustrated) is formed on the inner surfaces of the spaces 97 via theslits 96; subsequently, the electrode film 52 is formed by filling aconductive material such as tungsten, etc., into the spaces 97. Then,the portions of the electrode film 52 and the aluminum oxide layer 68formed inside the slits 95 and inside the slits 96 are removed byetching. Then, by filling silicon oxide into the slits 95 and into theslits 96, the insulating plates 71 are formed inside the slits 95; andthe insulating plates 72 are formed inside the slits 96 (referring toFIG. 3).

Continuing as shown in FIG. 1, the bit lines 75 that extend in theY-direction are formed on the stacked body 50 and on the insulating film70 and connected to the silicon pillars 62. The insulating film 76 isformed on the stacked body 50 and on the insulating film 70; and theplug 77 and the upper layer interconnect 80 are formed inside theinsulating film 76. The upper layer interconnect 80 is connected to thethrough-via 78 via the plug 77. Thus, the semiconductor memory device 1according to the embodiment is manufactured.

Effects of the embodiment will now be described.

In the embodiment as shown in FIG. 6, the bidirectional diode 20 isformed in the upper layer portion of the silicon substrate 10. Also, thesource electrode film 41 is connected to the bidirectional diode 20 viathe plug 40, the interconnects 36, and the plugs 37 when forming thesource electrode film 41 on the insulating film 32. Thereby, when thememory holes 93 reach the source electrode film 41 as shown in FIG. 8,the bidirectional diode 20 breaks down due to the positive chargeaccumulated inside the memory holes 93; and the positive charge flows inthe silicon substrate 10 via the source electrode film 41, the plug 40,the interconnects 36, the plugs 37, the n⁺-type diffusion layer 13, thep-type well 12, and the n-type well 11 and is emitted to the outside.Thereby, the arcing inside the insulating film 32 can be prevented; andthe breakdown of the insulating film 32 can be avoided.

As shown in FIG. 10, the source electrode film 41 is divided into thecentral portion 41 a and the peripheral portion 41 b by forming theslits 95. As a result, in the semiconductor memory device 1 aftercompletion shown in FIG. 1, the central portion 41 a of the sourceelectrode film 41 to which the silicon pillars 62 are connected can beinsulated reliably from the silicon substrate 10; and the parasiticcapacitance of the source electrode film 41 decreases. As a result, theoperations of the semiconductor memory device 1 are more stable andfaster.

Second Embodiment

A second embodiment will now be described.

FIG. 11 is a cross-sectional view showing a semiconductor memory deviceaccording to the embodiment.

As shown in FIG. 11, the semiconductor memory device 2 according to theembodiment differs from the semiconductor memory device 1 according tothe first embodiment described above (referring to FIG. 1 to FIG. 5) inthat the insulating plate 71 is not provided. The insulating plates 72(referring to FIG. 3) are provided in the semiconductor memory device 2as well.

The semiconductor memory device 2 can be manufactured by forming onlythe slits 96 (referring to FIG. 3) and by not forming the slits 95 inthe process shown in FIG. 10.

According to the embodiment as well, similarly to the first embodimentdescribed above, the positive charge that accumulates inside the memoryholes 93 (referring to FIG. 7) flows in the bidirectional diode 20 viathe source electrode film 41, the plug 40, the interconnects 36, and theplugs 37, causes the bidirectional diode 20 to breakdown, and isdischarged to the outside via the silicon substrate 10. As a result, thebreakdown of the insulating film 32 can be avoided.

In the semiconductor memory device 2 according to the embodiment,although the source electrode film 41 is not divided by the insulatingplate 71 (referring to FIG. 1 and FIG. 3), the bidirectional diode 20 isinterposed between the source electrode film 41 and the siliconsubstrate 10; therefore, the source electrode film 41 can be drivenelectrically independently from the silicon substrate 10 within therange of the prescribed potential difference.

Otherwise, the configuration, the manufacturing method, and the effectsof the embodiment are similar to those of the first embodiment describedabove.

Third Embodiment

A third embodiment will now be described.

FIG. 12 is a cross-sectional view showing a semiconductor memory deviceaccording to the embodiment.

FIG. 13 is a top view showing the semiconductor memory device accordingto the embodiment.

In the semiconductor memory device 3 according to the embodiment asshown in FIG. 12 and FIG. 13, a silicon film 54 that is made ofconductive polysilicon, an insulating film 55, and a plug 56 areprovided in addition to the configuration of the semiconductor memorydevice 1 according to the first embodiment described above (referring toFIG. 1 to FIG. 5). The insulating plates 71 and the insulating plates 72are linked to each other. The source electrode film 41 is not divided bythe insulating plates 71 and 72; but the silicon film 54 is divided bythe insulating plates 71 and 72. The silicon members 61 (referring toFIG. 1) are not provided; and the silicon pillars 62 are directlyconnected to the source electrode film 41.

Details will now be described.

The silicon film 54 is disposed between the source electrode film 41 andthe stacked body 50; and the configuration of the silicon film 54 is asubstantially flat plate configuration spreading along the XY plane. Theinsulating film 55 is disposed between the source electrode film 41 andthe silicon film 54. The plug 56 pierces the insulating film 55 and thesilicon layer 43 of the source electrode film 41; the lower end of theplug 56 contacts the metal layer 42 of the source electrode film 41; andthe upper end of the plug 56 contacts the silicon film 54. Thereby, aportion of the silicon film 54 is connected to the source electrode film41 via the plug 56. Similarly to the first embodiment, the sourceelectrode film 41 is connected to the bidirectional diode 20 via theplug 40. Accordingly, a portion of the silicon film 54 is connected tothe bidirectional diode 20 formed in a portion of the upper layerportion of the silicon substrate 10. The current path that reaches thebidirectional diode 20 from the silicon film 54 is insulated from thecontrol circuit 39. The insulating film 44 is provided at the peripheryof a stacked structure made of the source electrode film 41, theinsulating film 55, and the silicon film 54. The insulating film 45pierces the stacked structure in the Z-direction.

Although the insulating plates 71 and the insulating plates 72 piercethe silicon film 54 in the Z-direction, the insulating plates 71 and theinsulating plates 72 do not pierce the source electrode film 41.Therefore, the silicon film 54 is divided into a central portion 54 aand a peripheral portion 54 b by the insulating plates 71; but thesource electrode film 41 is not divided by the insulating plates 71. Theplug 56 is connected to the peripheral portion 54 b of the silicon film54. The position of the plug 40 is not limited to the outside of theinsulating plate 71. The central portion 54 a is divided into aplurality of portions for each block by the insulating plate 72. Asdescribed above, the insulating plate 72 divides the stacked body 50into a plurality of blocks in the Y direction. A contact 84 is providedfor each block in the insulating film 70. The lower end of the contact84 is connected to the central portion 54 a of the silicon film 54. As aresult, different potentials can be applied to the central portion 54 aof the silicon film 54 for each block. On the other hand, the contact 82connected to the source electrode film 41 is disposed at a positionseparated from the silicon film 54.

In the columnar portions 60, the silicon members 61 are not provided;and the lower ends of the silicon pillars 62 contact the sourceelectrode film 41. The silicon pillars 62 pierce the central portion 54a of the silicon film 54 and are insulated from the silicon film 54 bythe memory film 63 except for the aluminum oxide layer 68. The centralportion 54 a of the silicon film 54 functions as the gate electrode ofthe lowermost level for the silicon pillars 62, e.g., a select gate thatswitches the conduction/non-conduction of the silicon pillars 62 foreach block.

A method for manufacturing the semiconductor memory device according tothe embodiment will now be described.

FIG. 14 and FIG. 15 are cross-sectional views showing the method formanufacturing the semiconductor memory device according to theembodiment.

First, as shown in FIG. 14, the structure body from the siliconsubstrate 10 to the source electrode film 41 is made by a method similarto that of the first embodiment described above.

Continuing, the insulating film 55 is formed on the source electrodefilm 41; the plug 56 is formed inside the insulating film 55 and thesilicon layer 43 of the source electrode film 41; and the silicon film54 is formed on the plug 56. Then, the silicon film 54 and theinsulating film 55 are patterned; the insulating film 44 is formed atthe periphery of a stacked structure made of the source electrode film41, the silicon film 54, and the insulating film 55; and the insulatingfilm 45 is formed in a region surrounded with the stacked structure.

Continuing, the stacked body 50 is formed on the silicon film 54 byalternately depositing the insulating films 51 made of silicon oxide andthe sacrificial films 91 made of silicon nitride. Then, the insulatingfilm 70 is formed at the periphery of the stacked body 50. Then, themask pattern 92 is formed on the stacked body 50 and on the insulatingfilm 70. Then, the memory holes 93 are formed in the stacked body 50 byperforming RIE by using the mask pattern 92 as a mask and by using thesilicon film 54 as an etching stopper. The conditions of the RIE are setto conditions such that silicon oxide and silicon nitride are etchedefficiently. At this time, similarly to the first embodiment, positivecharge accumulates inside the memory holes 93.

Continuing, when the memory holes 93 reach the silicon film 54, theetching rate decreases. Thereby, the positions of the lower ends of thememory holes 93 are aligned. At this time, the positive charge thataccumulates inside the memory holes 93 moves into the silicon film 54.Then, as shown by the path E, the positive charge moves into the sourceelectrode film 41 via the plug 56, moves into the n⁺-type diffusionlayer 13 via the plug 40, the interconnects 36, and the plugs 37, causesbreakdown of the bidirectional diode 20, and moves into the siliconsubstrate 10. Then, the positive charge is discharged to the outside viathe silicon substrate 10. Thereby, the arcing at the insulating film 55and the insulating film 32 can be prevented.

Continuing as shown in FIG. 15, the conditions of the RIE are modifiedto conditions such that silicon is etched efficiently; and the RIE iscontinued. Thereby, the memory holes 93 reach the insulating film 55.Then, the conditions of the RIE are modified to conditions such thatsilicon oxide is etched efficiently; and the RIE is continued. Thereby,the memory holes 93 reach the silicon layer 43 of the source electrodefilm 41. Here, the RIE is ended.

Continuing as shown in FIG. 12, FIG. 4, and FIG. 5, the silicon oxidelayers 67, the charge storage films 66, the tunneling insulating films65, the silicon pillars 62, and the core members 64 are formed on theinner surfaces of the memory holes 93. The silicon pillars 62 areconnected to the silicon layer 43. Then, the insulating film 79 and thethrough-via 78 are formed.

Continuing as shown in FIG. 12, FIG. 13 and FIG. 3, the silicon film 54is utilized once as an etching stopper; the insulating film 70, thestacked body 50, and the region below the insulating film 70 and thestacked body 50 are etched; and the slits 95 and 96 are formed tosubstantially uniform depths. For example, the slits 95 and 96 can beformed simultaneously by etching using one mask pattern as a mask.Although the slits 95 and 96 pierce the silicon film 54 at this time,the slits 95 and 96 do not pierce the source electrode film 41. Thereby,the silicon film 54 is divided into the central portion 54 a and theperipheral portion 54 b by the slit 95. The silicon pillars 62 aresurrounded with the central portion 54 a; and the plug 56 is connectedto only the peripheral portion 54 b; therefore, by dividing the siliconfilm 54, the central portion 54 a of the silicon film 54 that functionsas the gate electrode of the lowermost level can be insulated from thesource electrode film 41. The subsequent manufacturing method is similarto that of the first embodiment described above.

Effects of the embodiment will now be described.

In the embodiment as well, similarly to the first embodiment describedabove, the bidirectional diode 20 is formed in the upper layer portionof the silicon substrate 10; and the source electrode film 41 isconnected to the bidirectional diode 20 via the plug 40, theinterconnects 36, and the plugs 37. The silicon film 54 is connected tothe source electrode film 41 via the plug 56. Thereby, when the memoryholes 93 reach the silicon film 54 as shown in FIG. 14, breakdown of thebidirectional diode 20 occurs; and the positive charge that accumulatesinside the memory holes 93 flows in the silicon substrate 10 via thesilicon film 54, the plug 56, the source electrode film 41, the plug 40,the interconnects 36, the plugs 37, the n⁺-type diffusion layer 13, thep-type well 12, and the n-type well 11 and is emitted to the outside.Thereby, the arcing inside the insulating film 55 and inside theinsulating film 32 can be prevented; and the breakdown of the insulatingfilm 55 and the insulating film 32 can be avoided.

By forming the slits 95 as shown in FIG. 12 and FIG. 13, the siliconfilm 54 is divided into the central portion 54 a and the peripheralportion 54 b. As a result, in the semiconductor memory device 3 aftercompletion, the central portion 54 a that functions as the gateelectrode of the lowermost level for the silicon pillars 62 can beinsulated reliably from the source electrode film 41. Thereby, thecentral portion 54 a and the source electrode film 41 can be drivenelectrically independently. Also, the parasitic capacitance of thecentral portion 54 a decreases.

Because the bidirectional diode 20 is interposed between the sourceelectrode film 41 and the silicon substrate 10, the source electrodefilm 41 can be driven electrically independently from the siliconsubstrate 10 within the range of the prescribed potential difference.

Otherwise, the configuration, the manufacturing method, and the effectsof the embodiment are similar to those of the first embodiment describedabove.

According to the embodiments described above, a semiconductor memorydevice and a method for manufacturing the semiconductor memory devicecan be realized in which downsizing is possible.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modification as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A method for manufacturing a semiconductor memorydevice, comprising: forming a first insulating film above asemiconductor substrate; forming a first conductive film above the firstinsulating film, the first conductive film being coupled to thesemiconductor substrate; forming a stacked body above the firstconductive film by alternately forming a first insulating material filmand a second insulating material film; forming a hole in the stackedbody to reach the first conductive film by performing reactive ionetching; forming a charge storage member inside the hole; forming asemiconductor member inside the hole where the charge storage member isformed, the semiconductor member being connected to the first conductivefilm; subdividing the first conductive film into a first portion reachedby the hole and a second portion coupled to the semiconductor substrateafter the forming of the hole; and replacing the second insulatingmaterial film with an electrode film after the forming of thesemiconductor member.
 2. The method according to claim 1, furthercomprising: forming a diode in an upper layer portion of thesemiconductor substrate, wherein the forming of the first insulatingfilm includes forming a plug inside the first insulating film, the plugbeing coupled between the diode and the first conductive film, and thefirst portion is connected to the semiconductor member, the secondportion is connected to the plug.
 3. The method according to claim 2,wherein the forming of the diode includes forming a first semiconductorlayer of a first conductivity type in a portion of the upper layerportion of the semiconductor substrate, forming a second semiconductorlayer of a second conductivity type in a portion of an upper layerportion of the first semiconductor layer, and forming a thirdsemiconductor layer of the first conductivity type in a portion of anupper layer portion of the second semiconductor layer, the firstconductive film being coupled to the third semiconductor layer.
 4. Themethod according to claim 1, further comprising: forming a secondinsulating film at the periphery of the stacked body, wherein thesubdividing the first conductive film is performed by forming a firstslit to pierce the second insulating film and the first conductive film.5. The method according to claim 4, wherein the subdividing the firstconductive film includes forming a second slit to pierce the stackedbody.
 6. A method for manufacturing a semiconductor memory device,comprising: forming a first insulating film above a semiconductorsubstrate; forming a first conductive film above the first insulatingfilm, the first conductive film being coupled to the semiconductorsubstrate; forming an intermediate insulating film above the firstconductive film; forming a plug piercing the intermediate insulatingfilm; forming a second conductive film above the intermediate insulatingfilm, the second conductive film being coupled to the first conductivefilm via the plug; forming a stacked body above the second conductivefilm by alternately forming a first insulating material film and asecond insulating material film; forming a hole in the stacked body, thesecond conductive film, and the intermediate insulating film to reachthe first conductive film by performing reactive ion etching; forming acharge storage member inside the hole; forming a semiconductor memberinside the hole where the charge storage member is formed, thesemiconductor member being connected to the first conductive film;subdividing the second conductive film into a first portion and a secondportion after the forming of the hole, the first portion surrounding thesemiconductor member, the second portion being connected to the plug;and replacing the second insulating material film with an electrode filmafter the forming of the semiconductor member.
 7. The method accordingto claim 6, further comprising: forming a diode in an upper layerportion of the semiconductor substrate, wherein the forming of the diodeincludes forming a first semiconductor layer of a first conductivitytype in a portion of the upper layer portion of the semiconductorsubstrate, forming a second semiconductor layer of a second conductivitytype in a portion of an upper layer portion of the first semiconductorlayer, and forming a third semiconductor layer of the first conductivitytype in a portion of an upper layer portion of the second semiconductorlayer, the first conductive film being coupled to the thirdsemiconductor layer.
 8. The method according to claim 6, furthercomprising: forming a second insulating film at the periphery of thestacked body, wherein the subdividing the second conductive film isperformed by forming a first slit to pierce the second insulating filmand the second conductive film.
 9. The method according to claim 8,wherein the subdividing the second conductive film includes forming asecond slit to pierce the stacked body.